2026年3月3日
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The TP65B110HRU High‑Voltage GaN Bi‑Directional Switch features a ±650V rating with ±800V transient capability, a high 3V gate threshold, and a ±20V gate‑source voltage range. It delivers low reverse‑conduction loss, high dv/dt immunity greater than 100V/ns, and robust 2kV HBM ESD performance. Its compact TOLT package and bi‑directional architecture make it well‑suited for efficient, high‑performance power designs requiring reliable switching in both directions.
