概览

描述

The NP75N04YLG is N-channel MOS Field Effect Transistors designed for high current switching applications.

特性

  • Super low on-state resistance RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on) = 8.3 mΩ MAX. (VGS = 4.5 V, ID = 38 A)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

应用

文档

文档标题 类型 日期
PDF350 KB
数据手册
PDF3.23 MB
应用文档
PDF2.24 MB
手册
PDF223 KB
Product Reliability Report

设计和开发

模块

支持