概览

描述

The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching
applications.

特性

  • Super low on-state resistance
    • RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 9500pF TYP. (VDS = 50 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

应用

文档

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手册

设计和开发

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