瑞萨电子 (Renesas Electronics Corporation)
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RBA250N10CHPF-4UA02

有效

Nch Power MOSFET 100V 250A 2.4mohm TO-263-7 / D2PAK-7 for Automotive

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概览

The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Super low on-state resistance
    • RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 9500pF TYP. (VDS = 50 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

文档

相关文档
类型 文档标题 日期
数据手册
RBA250N10CHPF-4UA02 100V – 250A – N-channel Power MOS FET Application : Automotive
PDF 659 KB
指南
Power Discrete Mount Pad
PDF 796 KB
应用说明
Power MOSFET Application Note
PDF 3.23 MB 日本語
应用说明
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
宣传手册
Power MOSFET & IPD
PDF 2.24 MB
5 项目

设计和开发

rh850c1m-a1-reference-board.jpg
参考设计
REIN_Inverter_V2 有效

Traction Motor Controller Board

This traction motor controller mainly intends to drive motor control for HEV/EV-based applications and these consist of two boards – the controller board which controls the motor driver, digital, and analog sections and the power board includes power MOSFETs for motor drive. The controller board...

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REIN_Inverter_V2 Hardware Design Document
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