100V – 250A – N-channel Power MOS FET
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概览
描述
The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching
applications.
特性
- Super low on-state resistance
- RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
- Low input capacitance
- Ciss = 9500pF TYP. (VDS = 50 V)
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)
应用
设计和开发
模块
ECAD 模块
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
产品选择
Processing table
| MP-25ZU | TO-263-7 / D2PAK-7 | Embossed Tape | 获取样片, |
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