概览
描述
The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications.
特性
- Super low on-state resistance
- RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
- Low input capacitance
- Ciss = 9500pF TYP. (VDS = 50 V)
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)
产品对比
应用
文档
相关文档
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 659 KB | |
| 指南 | PDF 796 KB | |
| 应用说明 | PDF 3.23 MB 日本語 | |
| 应用说明 | PDF 648 KB 日本語 | |
| 宣传手册 | PDF 2.24 MB | |
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设计和开发
开发板与套件
参考设计
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