特性
- Single 3V supply: 2.7V to 3.6V
- Access time: 45ns (max.)
- Current consumption: Standby: 0.3µA (typ.)
- Equal access and cycle times
- Common data input and output: Three-state output
- Directly TTL compatible: All inputs and outputs
- Battery backup operation
描述
The RMLV0416E is a 4-Mbit static RAM organized as 262, 144-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0416E realizes higher density, higher performance, and low-power consumption. The RMLV0416E device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 44-pin TSOP (II) or 48-ball fine-pitch ball grid array.
产品参数
| 属性 | 值 |
|---|---|
| Memory Density | 4M |
| Organization | 256K x 16 |
| Access Time (ns) | 45 |
| Supply Voltage (V) | - |
| Temp. Range (°C) | -40 to +85 |