Space & Harsh Environment

概览

The HS-303CEH is an analog switch and a monolithic device that is fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. The HS-303CEH is pinout compatible and functionally equivalent to the HS-303RH. The HS-303CEH offers low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant across the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303CEH can operate with ±15V rails. Specifications See SMD 5962-95813 for detailed electrical specifications.

HS-303CEH Functional Diagram
HS-303CEH Functional Diagram
  • Electrically screened to DLA SMD# 5962-95813
  • QML, per MIL-PRF-38535
  • No latch-up, dielectrically isolated device islands
  • Pinout and functionally compatible with the HS-303RH series of analog switches
  • Analog signal range equal to the supply voltage range
  • Low leakage : 150nA (max, post-rad)
  • Low rON : 60Ω (max, post-rad)
  • Low standby supply current : ±150µA (max, post-rad)
  • Radiation assurance
    • High dose rate (50 to 300rad(Si)/s) : 100krad(Si)
    • Low dose rate (0.01rad(Si)/s) : 50krad(Si) (Note 1)
  • Single event effects
    • For LET = 60MeV·cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)

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产品选择

    Processing table
    器件号
    Pkg. Type
    Carrier Type
    MOQ
    DLA SMD
    购买 / 样片
    HS0-303CEH-Q
    play_circleActive
    memory
    view_in_ar
    		100 5962R9581308V9A
    HS9-303CEH/PROTO
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    memory
    view_in_ar
    		CFP Tray 1
    HS9-303CEH-Q
    play_circleActive
    memory
    view_in_ar
    		CFP Tray 25 5962R9581308VXC
    HS0-303CEH/SAMPLE
    play_circleActive
    memory
    view_in_ar
    		DIE 5
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