特性
- Electrically screened to DLA SMD# 5962-95813
- QML, per MIL-PRF-38535
- No latch-up, dielectrically isolated device islands
- Pinout and functionally compatible with the HS-303RH series of analog switches
- Analog signal range equal to the supply voltage range
- Low leakage : 150nA (max, post-rad)
- Low rON : 60Ω (max, post-rad)
- Low standby supply current : ±150µA (max, post-rad)
- Radiation assurance
- High dose rate (50 to 300rad(Si)/s) : 100krad(Si)
- Low dose rate (0.01rad(Si)/s) : 50krad(Si) (Note 1)
- Single event effects
- For LET = 60MeV·cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)
描述
The HS-303CEH is an analog switch and a monolithic device that is fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. The HS-303CEH is pinout compatible and functionally equivalent to the HS-303RH. The HS-303CEH offers low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant across the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303CEH can operate with ±15V rails. Specifications See SMD 5962-95813 for detailed electrical specifications.
产品参数
| 属性 | 值 |
|---|---|
| Rating | Space |
| Switches (#) | 2 |
| RON (max) (ohms) | 60 |
| Supply Voltage (min) (V) | - |
| Supply Voltage (max) (V) | - |
| Turn-Off Time (max) (ns) | 450 |
| tOFF (max, post-rad) (ns) | 1000 |
| Turn-On Time (max) (ns) | 500 |
| Temp. Range (°C) | -40 to +85°C, -55 to +125°C |
| TID HDR (krad(Si)) | 100, 300 |
| TID LDR (krad(Si)) | 50 |
| DSEE (MeV·cm2/mg) | DSEE Free (DI) |
| Flow | RH Hermetic |
| Qualification Level | Class V, EM |
| Die Sale Availability? | Yes |