Radiation Tolerant Low-Side GaN FET Driver Evaluation Board
The ISL71040MEV1Z evaluation platform is designed to evaluate the ISL71040M. The ISL71040M is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated...
概览
简介
The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4. 5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14. 7V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The ISL71040M's split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on and turn-off paths. The ISL71040M operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld Thin Dual Flat No-Lead (TDFN) plastic package.
特性
- Wide operating voltage range of 4.5V to 13.2V
- Up to 14.7V logic inputs (regardless of VDD level) Inverting and non-inverting inputs
- Optimized to drive enhancement mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Independent outputs for adjustable turn-on/turn-off speeds
- NiPdAu-Ag Lead finish (Sn-free, Pb-free)
- Moisture Sensitivity Level (MSL) Rating: 1
- Passes NASA Low Outgassing Specifications
- Full military temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
- Characterized radiation levels
- Low Dose Rate (LDR) <0.01rad(Si)/s : 30krad(Si)
- No SEB/L, VDD = 16.5V : 43MeV•cm2/mg
文档
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| PDF 762 KB | 数据手册 | |
| PDF 4.85 MB | 手册 | |
| PDF 418 KB | 技术摘要 | |
| PDF 414 KB | Product Advisory | |
| PDF 316 KB | 报告 | |
| PDF 470 KB 日文 | 白皮书 | |
| PDF 548 KB | 白皮书 | |
| PDF 338 KB | 应用文档 | |
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设计和开发
软件与工具
软件与工具
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Software type
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公司
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| iSim:PE Offline Simulation Tool iSim Personal Edition (iSim:PE) speeds the design cycle and reduces risk early in any project, identifying parts that can be used in current as well as next-generation designs.
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Simulator | 瑞萨电子 |
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开发板与套件
开发板与套件
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模型
ECAD 模块
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
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支持
Renesas 样片
选择下单器件型号:
| 下单器件型号 | 样片 |
|---|---|
| ISL71040MRTZ | Availability |
| ISL71040MRTZ-T | Availability |
| ISL71040MRTZ-T7A | Availability |