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The HIP2211EVAL3Z and HIP2211EVAL2Z boards are designed to provide a quick and comprehensive method for evaluating the HIP2211 100V, 3A source, 4A sink, high-frequency half-bridge driver for driving the gates of two N-channel MOSFETs in a half-bridge configuration. Two N-channel MOSFETs (with dual footprint supporting multiple packages such as TO220 and DPAK) and an inductor-capacitor LC filter are included on the evaluation boards to allow for the evaluation of a half-bridge driven load such as a synchronous buck switching regulator.

The HIP2211 half-bridge driver is offered in an 8Ld SOIC, 8Ld DFN or 10Ld DFN package (with enhanced thermal EPAD). The HIP2211EVAL3Z evaluation board is designed for the 10Ld DFN package. The 8Ld DFN package can fit on this board as well. The HIP2211EVAL2Z evaluation board is designed for the 8Ld SOIC package. Both boards operate from a supply voltage of 6V to 18V DC with the capability of driving both the high-side and the low-side MOSFETs in a 100V half-bridge configuration.

特性

  • 3A source and 4A sink NMOS gate drivers
  • Internal level shifter and bootstrap diode for gate driver on high-side NFET
  • Up to 100V high-side bootstrap reference
  • 6V to 18V bias supply operation
  • Fast 15ns typical propagation delay and 2ns typical propagation delay match supports up to 1MHz operation

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