特性
- Super low on-state resistance
RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) - Low Ciss: Ciss = 5450 pF TYP.
描述
The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications.
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free |
|---|---|---|---|---|---|---|---|---|
| 2SK3814-Z-AZ | Obsolete | N/A | Out of Stock | MP-3Z | 3# | Bag | Yes | |
| 2SK3814-Z-E1-AZ | Obsolete | N/A | In Stock | MP-3Z | 3# | Embossed Tape | 1 | Yes |
| 2SK3814(0)-Z-E1-AZ | Obsolete | N/A | In Stock | MP-3Z | 3# | Embossed Tape | 1 | Yes |
| 2SK3814(0)-Z-E2-AZ | Obsolete | N/A | Out of Stock | MP-3Z | 3# | Embossed Tape | 1 | Yes |
加载中
- 应用说明英语PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- 应用说明英语PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- 指南英语PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
- 应用说明英语AI 生成的摘要: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
- 应用说明英语AI 生成的摘要: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
推荐文档 (1)
数据手册 (1)
- 指南英语PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
手册和指南 (1)
- 应用说明英语PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- 应用说明英语PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- 应用说明英语AI 生成的摘要: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
- 应用说明英语AI 生成的摘要: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
应用说明和白皮书 (4)
产品通告（产品变更、EOL 等） (1)
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