封装信息
| Lead Count (#) | 24 |
| Pkg. Code | PSG24 |
| Pitch (mm) | 1.27 |
| Pkg. Type | SOIC |
| Pkg. Dimensions (mm) | 15.4 x 7.6 x 2.34 |
环境和出口类别
| Pb (Lead) Free | Yes |
| Moisture Sensitivity Level (MSL) | 1 |
| ECCN (US) | NLR |
| HTS (US) | 8542320041 |
产品属性
| Lead Count (#) | 24 |
| Pb (Lead) Free | Yes |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 1 |
| Country of Assembly | Taiwan |
| Country of Wafer Fabrication | Taiwan, United States |
| Price (USD) | 1ku | 4.88381 |
| Access Time (ns) | 25 |
| Architecture | Asynchronous |
| Bus Width (bits) | 8 |
| Core Voltage (V) | 5 |
| Density (Kb) | 16 |
| I/O Voltage (V) | 5 - 5 |
| Length (mm) | 15.4 |
| MOQ | 310 |
| Organization | 2K x 8 |
| Package Area (mm²) | 117.0 |
| Pb Free Category | e3 Sn |
| Pitch (mm) | 1.27 |
| Pkg. Dimensions (mm) | 15.4 x 7.6 x 2.34 |
| Pkg. Type | SOIC |
| Qty. per Carrier (#) | 31 |
| Qty. per Reel (#) | 0 |
| Requires Terms and Conditions | Does not require acceptance of Terms and Conditions |
| Tape & Reel | No |
| Temp. Range | 0 to 70°C |
| Thickness (mm) | 2.34 |
| Width (mm) | 7.6 |
描述
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.