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5.0V 2K x 8 Asynchronous Static RAM

封装信息

CAD 模型: View CAD Model
Pkg. Type: SOIC
Pkg. Code: PSG24
Lead Count (#): 24
Pkg. Dimensions (mm): 15.4 x 7.6 x 2.34
Pitch (mm): 1.27

环境和出口类别

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 1
ECCN (US) EAR99
HTS (US) 8542.32.0041

产品属性

Lead Count (#) 24
Pb (Lead) Free Yes
Carrier Type Tube
Moisture Sensitivity Level (MSL) 1
Country of Assembly TAIWAN
Country of Wafer Fabrication TAIWAN, UNITED STATES
Access Time (ns) 25
Architecture Asynchronous
Bus Width (bits) 8
Core Voltage (V) 5V
Density (Kb) 16
I/O Voltage (V) 5 - 5
Length (mm) 15.4
MOQ 310
Organization 2K x 8
Package Area (mm²) 117
Pb Free Category e3 Sn
Pitch (mm) 1.27
Pkg. Dimensions (mm) 15.4 x 7.6 x 2.34
Pkg. Type SOIC
Price (USD) $5.69174
Qty. per Carrier (#) 31
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range (°C) -40 to 85°C
Thickness (mm) 2.34
Width (mm) 7.6
已发布 No

描述

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.