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5.0V 8K x 8 Asynchronous Static RAM

封装信息

Pkg. Type: CDIP
Pkg. Code: CD28
Lead Count (#): 28
Pkg. Dimensions (mm): 37.2 x 15.24 x 2.67
Pitch (mm): 2.54

环境和出口类别

Pb (Lead) Free No
Moisture Sensitivity Level (MSL) 1
ECCN (US) 3A001.a.2.c
HTS (US) 8542.32.0041

产品属性

Lead Count (#) 28
Pb (Lead) Free No
Carrier Type Tube
Moisture Sensitivity Level (MSL) 1
Country of Assembly Thailand
Country of Wafer Fabrication Taiwan, United States
Access Time (ns) 45
Architecture Asynchronous
Bus Width (bits) 8
Core Voltage (V) 5
Density (Kb) 64
I/O Voltage (V) 5 - 5
Length (mm) 37.2
MOQ 169
Organization 8K x 8
Package Area (mm²) 566.9
Pb Free Category e0
Pitch (mm) 2.54
Pkg. Dimensions (mm) 37.2 x 15.24 x 2.67
Pkg. Type CDIP
Qty. per Carrier (#) 13
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range (°C) -55 to 125°C
Thickness (mm) 2.67
Width (mm) 15.24
已发布 No

描述

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.