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瑞萨电子 (Renesas Electronics Corporation)
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM

封装信息

CAD 模型:View CAD Model
Pkg. Type:TQFP
Pkg. Code:PKG100
Lead Count (#):100
Pkg. Dimensions (mm):20.0 x 14.0 x 1.4
Pitch (mm):0.65

环境和出口类别

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)EAR99
HTS (US)8542.32.0041

产品属性

Lead Count (#)100
Pb (Lead) FreeYes
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
Country of AssemblyTAIWAN
Country of Wafer FabricationTAIWAN
ArchitectureZBT
Bus Width (bits)18
Core Voltage (V)2.5
Cycle Time (ns)75
Density (Kb)18432
I/O Voltage (V)2.5 - 2.5
Length (mm)20
MOQ72
Organization1024K x 18
Output TypeFlowthrough
Package Area (mm²)280
Pb Free Categorye3 Sn
Pitch (mm)0.65
Pkg. Dimensions (mm)20.0 x 14.0 x 1.4
Pkg. TypeTQFP
Price (USD)$50.06361
Qty. per Carrier (#)72
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.4
Width (mm)14

描述

The 71T75902 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround.