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3.3V, 32K X 8 Asynchronous Static RAM

封装信息

Lead Count (#) 28
Pkg. Code PZG28
Pitch (mm) 0.55
Pkg. Type TSOP
Pkg. Dimensions (mm) 8.0 x 11.8 x 1.0

环境和出口类别

Pb (Lead) Free Yes
ECCN (US) NLR
HTS (US) 8542320041
Moisture Sensitivity Level (MSL) 3

产品属性

Lead Count (#) 28
Pb (Lead) Free Yes
Carrier Type Reel
Access Time (ns) 20
Architecture Asynchronous
Bus Width (bits) 8
Core Voltage (V) 3.3
Density (Kb) 256
I/O Voltage (V) 3.3 - 3.3
Length (mm) 8.0
MOQ 2000
Moisture Sensitivity Level (MSL) 3
Organization 32K x 8
Package Area (mm²) 94.4
Pb Free Category e3 Sn
Pitch (mm) 0.55
Pkg. Dimensions (mm) 8.0 x 11.8 x 1.0
Pkg. Type TSOP
Qty. per Carrier (#) 0
Qty. per Reel (#) 2000
Reel Size (in) 13
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel Yes
Temp. Range 0 to 70°C
Thickness (mm) 1.0
Width (mm) 11.8

描述

The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.