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瑞萨电子 (Renesas Electronics Corporation)
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

封装信息

CAD 模型:View CAD Model
Pkg. Type:CABGA
Pkg. Code:BQG165
Lead Count (#):165
Pkg. Dimensions (mm):15.0 x 13.0 x 1.2
Pitch (mm):1

环境和出口类别

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

产品属性

Lead Count (#)165
Pb (Lead) FreeYes
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)4608
I/O Frequency (MHz)166 - 166
I/O Voltage (V)3.3 - 3.3
Length (mm)15
MOQ2000
Organization128K x 36
Output TypePipelined
Package Area (mm²)195
Pb Free Categorye1 SnAgCu
Pitch (mm)1
Pkg. Dimensions (mm)15.0 x 13.0 x 1.2
Pkg. TypeCABGA
Qty. per Carrier (#)0
Qty. per Reel (#)2000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)0 to 70°C
Thickness (mm)1.2
Width (mm)13

描述

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.