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3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout

封装信息

Lead Count (#) 44
Pkg. Code PHG44
Pitch (mm) 0.8
Pkg. Type TSOP
Pkg. Dimensions (mm) 18.41 x 10.16 x 1.0

环境和出口类别

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 3
ECCN (US) EAR99
HTS (US) 8542.32.0041

产品属性

Lead Count (#) 44
Pb (Lead) Free Yes
Carrier Type Reel
Moisture Sensitivity Level (MSL) 3
Country of Assembly Taiwan
Country of Wafer Fabrication Taiwan, United States
Price (USD) 7.29922
Access Time (ns) 12
Architecture Asynchronous
Bus Width (bits) 16
Core Voltage (V) 3.3
Density (Kb) 4096
I/O Voltage (V) 3.3 - 3.3
Length (mm) 18.41
MOQ 1500
Organization 256K x 16
Package Area (mm²) 187.0
Pb Free Category e3 Sn
Pitch (mm) 0.8
Pkg. Dimensions (mm) 18.41 x 10.16 x 1.0
Pkg. Type TSOP
Qty. per Carrier (#) 0
Qty. per Reel (#) 1500
Reel Size (in) 13
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel Yes
Temp. Range (°C) -40 to 85°C
Thickness (mm) 1.0
Width (mm) 10.16

描述

The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.