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瑞萨电子 (Renesas Electronics Corporation)
3.3V 32K x 32 Synchronous PipeLined Burst SRAM

封装信息

CAD 模型:View CAD Model
Pkg. Type:TQFP
Pkg. Code:PKG100
Lead Count (#):100
Pkg. Dimensions (mm):20.0 x 14.0 x 1.4
Pitch (mm):0.65

环境和出口类别

Pb (Lead) FreeYes
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
Moisture Sensitivity Level (MSL)3

产品属性

Lead Count (#)100
Pb (Lead) FreeYes
Carrier TypeReel
ArchitectureSynch Burst
Bus Width (bits)32
Core Voltage (V)3.3
Density (Kb)1024
I/O Voltage (V)3.3 - 3.3
Length (mm)20
MOQ1000
Moisture Sensitivity Level (MSL)3
Organization32K x 32
Output TypePipelined
Package Area (mm²)280
Pb Free Categorye3 Sn
Pitch (mm)0.65
Pkg. Dimensions (mm)20.0 x 14.0 x 1.4
Pkg. TypeTQFP
Qty. per Carrier (#)0
Qty. per Reel (#)1000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.4
Width (mm)14

描述

The 71V432 3.3V CMOS high-speed CacheRAM is organized as 32K x 32. The pipelined burst architecture provides cost effective 3-1-1-1 secondary cache performance for processors up to 100 MHz. The 71V432 CacheRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the CacheRAM.