特性
- High performance system speed - 95 MHz
- (8ns Clock-to-Data Access)
- ZBTTM Feature - No dead cycles between write and read
- cycles
- Internally synchronized signal eliminates the need to
- control OE
- Single R/W (READ/WRITE) control pin
- 4-word burst capability (Interleaved or linear)
- Individual byte write (BW1 - BW4) control (May tie active)
- Three chip enables for simple depth expansion
- Single 3.3V power supply (±5%)
- Available in 100-pin TQFP package
描述
The 71V547 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turn-around. The 71V547 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.
产品参数
| 属性 | 值 |
|---|---|
| Density (Kb) | 4608 |
| Bus Width (bits) | 36 |
| Core Voltage (V) | 3.3 |
| Pkg. Code | PKG100 |
| Organization | 128K x 36 |
| I/O Voltage (V) | 2.5 - 2.5 |
| I/O Frequency (MHz) | 100 - 100 |
| Temp. Range (°C) | -40 to 85°C, 0 to 70°C |
| Architecture | ZBT |
| Output Type | Flowthrough |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) | Pitch (mm) |
|---|---|---|---|
| TQFP | 20.0 x 14.0 x 1.4 | 100 | 0.65 |