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3.3V 256K x 36 Synchronous 3.3V I/O Flow-Through SRAM

封装信息

CAD 模型:View CAD Model
Pkg. Type:TQFP
Pkg. Code:PKG100
Lead Count (#):100
Pkg. Dimensions (mm):20.0 x 14.0 x 1.4
Pitch (mm):0.65

环境和出口类别

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

产品属性

Lead Count (#)100
Pb (Lead) FreeYes
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)9216
I/O Voltage (V)3.3 - 3.3
Length (mm)20
MOQ1000
Organization256K x 36
Output TypeFlowthrough
Package Area (mm²)280
Pb Free Categorye3 Sn
Pitch (mm)0.65
Pkg. Dimensions (mm)20.0 x 14.0 x 1.4
Pkg. TypeTQFP
Price (USD)$13.1768
Qty. per Carrier (#)0
Qty. per Reel (#)1000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)0 to 70°C
Thickness (mm)1.4
Width (mm)14
已发布No

描述

The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.