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3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM

封装信息

Lead Count (#) 165
Pkg. Code BQ165
Pitch (mm) 1
Pkg. Type CABGA
Pkg. Dimensions (mm) 15.0 x 13.0 x 1.2

环境和出口类别

Pb (Lead) Free No
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

产品属性

Lead Count (#) 165
Pb (Lead) Free No
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Price (USD) | 1ku 22.37162
Architecture Synch Burst
Bus Width (bits) 18
Core Voltage (V) 3.3
Density (Kb) 9216
I/O Frequency (MHz) 1 - 1
I/O Voltage (V) 3.3 - 3.3
Length (mm) 15.0
MOQ 136
Organization 512K x 18
Output Type Pipelined
Package Area (mm²) 195.0
Pb Free Category e0
Pitch (mm) 1.0
Pkg. Dimensions (mm) 15.0 x 13.0 x 1.2
Pkg. Type CABGA
Qty. per Carrier (#) 136
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range 0 to 70°C
Thickness (mm) 1.2
Width (mm) 13.0

描述

The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.