封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | SOICW |
| Pkg. Code: | MHU |
| Lead Count (#): | 28 |
| Pkg. Dimensions (mm): | 17.9 x 7.5 x 0.20 |
| Pitch (mm): | 1.3 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| Pb (Lead) Free | Yes |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.39.0040 |
| RoHS (HI5860IBZ) | 下载 |
产品属性
| Lead Count (#) | 28 |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 3 |
| Pb (Lead) Free | Yes |
| Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
| Temp. Range (°C) | -40 to +85°C |
| Conversion Rate (Max) (kSPS) | 130000 |
| Differential NonLinearity LSB | 1 |
| Integral NonLinearity LSB | 2 |
| Length (mm) | 17.9 |
| MOQ | 260 |
| Output I/V | I |
| Pitch (mm) | 1.3 |
| Pkg. Dimensions (mm) | 17.9 x 7.5 x 0.20 |
| Pkg. Type | SOICW |
| Power (text) | 32mW at 100Msps (3V) |
| Qualification Level | Standard |
| Resolution (bits) | 12 |
| SFDR (Typical) to Nyquist | 76dBc 2.5MHz@50Msps |
| Supply Voltage Vs Range | 3 to 5 |
| Thickness (mm) | 0.2 |
| VREF (V) | Int/Ext |
| VS (Max) (V) | 5 |
| VS (Min) (V) | 3 |
| Width (mm) | 7.5 |
有关 HI5860 的资源
描述
The HI5860 is a 12-bit, 130MSPS (Mega Samples Per Second), High-Speed, low power, D/A converter which is implemented in an advanced CMOS process. Operating from a single +3V to +5V supply, the converter provides 20mA of full scale output current and includes edge-triggered CMOS input data latches. Low glitch energy and excellent frequency domain performance are achieved using a segmented current source architecture. This device complements the HI5x60 and HI5x28 family of High-Speed converters, which includes 8-, 10-, 12-, and 14-bit devices.
