特性
- Electrically Screened to SMD # 5962-94676
- QML Qualified per MIL-PRF-38535 Requirements
- Low Distortion (HD3, 30MHz) -84dBc (Typ)
- Wide -3dB Bandwidth 850MHz (Typ)
- Very High Slew Rate 2300V/µs (Typ)
- Fast Settling (0.1%) 11ns (Typ)
- Excellent Gain Flatness (to 50MHz) 0.05dB (Typ)
- High Output Current 65mA (Typ)
- Fast Overdrive Recovery <10ns (Typ)
- Total Gamma Dose 300kRAD(Si)
- Latch Up None (DI Technology)
描述
Support is limited to customers who have already adopted these products.
The HS-1100RH is a radiation hardened high speed, wideband, fast settling current feedback amplifier. Built with Intersil's proprietary, complementary bipolar UHF-1 (DI bonded wafer) process, it is the fastest monolithic amplifier available from any semiconductor manufacturer. These devices are QML approved and are processed and screened in full compliance with MIL-PRF-38535. The HS-1100RH's wide bandwidth, fast settling characteristic, and low output impedance make this amplifier ideal for driving fast A/D converters. Component and composite video systems will also benefit from this amplifier's performance, as indicated by the excellent gain flatness, and 0. 03%/0. 05 Deg. Differential Gain/Phase specifications (RL = 75Ω). Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-94676.
应用
- Video Switching and Routing
- Pulse and Video Amplifiers
- Wideband Amplifiers
- RF/IF Signal Processing
- Flash A/D Driver
- Imaging Systems
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | DLA SMD | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | CAGE code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HS7B-1100RH-Q | Obsolete | N/A | Out of Stock | SBDIP | 8# | Tray | Not Applicable | 5962-94676 | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS7B-1100RH/PROTO | Obsolete | N/A | Out of Stock | SBDIP | 8# | Tray | Not Applicable | Exempt | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C | 34371 |
- 应用说明英语PDF 263 KB r13an0003eu0100-biasing-op-amps 2019年12月06日AI 生成的摘要: Proper biasing of operational amplifiers is essential to avoid malfunction in AC-coupled circuits. A missing DC bias path causes long stabilization times and potential failures. Adding input resistors to ground provides a DC path for bias currents, minimizing offset errors. For single-supply AC-coupled amplifiers, biasing uses a reference voltage, ideally from a high-PSRR voltage reference or buffered voltage divider, to maintain signal symmetry and reduce noise. Understanding frequency responses of input and feedback components is crucial for setting bandwidth and gain characteristics.
- EOL 通告英语PDF 200 KB PLC15033 2015年6月11日
- 产品咨询英语PDF 83 KB PA14004 2014年1月30日
- 产品咨询英语PDF 176 KB PA11095 2011年9月16日
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
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- 应用说明英语PDF 263 KB r13an0003eu0100-biasing-op-amps 2019年12月06日AI 生成的摘要: Proper biasing of operational amplifiers is essential to avoid malfunction in AC-coupled circuits. A missing DC bias path causes long stabilization times and potential failures. Adding input resistors to ground provides a DC path for bias currents, minimizing offset errors. For single-supply AC-coupled amplifiers, biasing uses a reference voltage, ideally from a high-PSRR voltage reference or buffered voltage divider, to maintain signal symmetry and reduce noise. Understanding frequency responses of input and feedback components is crucial for setting bandwidth and gain characteristics.
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
应用说明和白皮书 (3)
- EOL 通告英语PDF 200 KB PLC15033 2015年6月11日
- 产品咨询英语PDF 83 KB PA14004 2014年1月30日
- 产品咨询英语PDF 176 KB PA11095 2011年9月16日
产品通告(产品变更、EOL 等) (3)
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