封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | DIE |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | |
| Pb (Lead) Free | No |
| ECCN (US) | 9A515.e.1 |
| HTS (US) | 8542.39.0090 |
| RoHS (HS0-303CEH-Q) | 英语日文 |
产品属性
| Pkg. Type | DIE |
| DLA SMD | 5962R9581308V9A |
| Pb (Lead) Free | No |
| MOQ | 100 |
| Temp. Range (°C) | -55 to +125°C |
| CAGE code | 34371 |
| DSEE (MeV·cm2/mg) | DSEE Free (DI) |
| Die Sale Availability? | Yes |
| Flow | RH Hermetic |
| Lead Compliant | No |
| Leakage Current (max, post-rad) (±nA) | 150 |
| PROTO Availability? | Yes |
| Qualification Level | Class V |
| RON (max) (ohms) | 60 |
| Rating | Space |
| SMD URL | 5962-95813 |
| Supply Current (max, post-rad) | +150µA/-100µA |
| Supply Voltage (max) (V) | 15 - 15 |
| Supply Voltage (min) (V) | -15 - -15 |
| Supply Voltage of Specification Limits (±V) | 12 |
| Switches (#) | 2 |
| TID HDR (krad(Si)) | 300 |
| TID LDR (krad(Si)) | 50 |
| Tape & Reel | No |
| Turn-Off Time (max) (ns) | 450 |
| Turn-On Time (max) (ns) | 500 |
| rON (max, post-rad) (Ω) | 60 |
| tOFF (max, post-rad) (ns) | 1000 |
| tON (max, post-rad) (ns) | 1000 |
有关 HS-303CEH 的资源
描述
The HS-303CEH is an analog switch and a monolithic device that is fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. The HS-303CEH is pinout compatible and functionally equivalent to the HS-303RH. The HS-303CEH offers low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant across the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303CEH can operate with ±15V rails. Specifications See SMD 5962-95813 for detailed electrical specifications.