特性
- Electrically screened to SMD # 5962-95626
- QML qualified per MIL-PRF-38535 requirements
- 1.2 micron radiation hardened bulk CMOS
- Total dose 300 krad(Si) (Max)
- Transient output upset >5 x 108 rad(Si)/s
- LET >100 MEV-cm2/mg
- Fast access time 35ns (Typ)
- Single 5V power supply
- Single pulse 10V field programmable
- Synchronous operation
- On-chip address latches
- Three-state outputs
- NiCr fuses
- Low standby current <500µA (Pre-Rad)
- Low operating current <15mA/MHz
- Military temperature range -55 °C to 125 °C
描述
The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus control in addition to the chip enable control. All bits are manufactured storing a logical 0 and can be selectively programmed for a logical 1 at any bit location. Applications for the HS-6664RH CMOS PROM include low-power microprocessor-based instrumentation and communications systems, remote data acquisition and processing systems, and processor control storage. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95626.
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | DLA SMD | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | CAGE code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HS1-6664RH-8 | Obsolete | N/A | Out of Stock | SBDIP | 28# | Tube | Not Applicable | 2.5mm | 35.6 x 15.1 x 2.41 | 5962F9562601QXC | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS1-6664RH-Q | Obsolete | N/A | Out of Stock | SBDIP | 28# | Tube | Not Applicable | 2.5mm | 35.6 x 15.1 x 2.41 | 5962F9562601VXC | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS1-6664RH/PROTO | Obsolete | N/A | Out of Stock | SBDIP | 28# | Tube | Not Applicable | 2.5mm | 35.6 x 15.1 x 2.41 | Exempt | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C | 34371 | |
| HS9-6664RH-8 | Obsolete | N/A | Out of Stock | CFP | 28# | Tray | Not Applicable | 1.3mm | 18.3 x 12.7 x 0.00 | 5962F9562601QYC | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS9-6664RH-Q | Obsolete | N/A | Out of Stock | CFP | 28# | Tray | Not Applicable | 1.3mm | 18.3 x 12.7 x 0.00 | 5962F9562601VYC | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS9-6664RH/PROTO | Obsolete | N/A | Out of Stock | CFP | 28# | Tray | Not Applicable | 1.3mm | 18.3 x 12.7 x 0.00 | Exempt | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C | 34371 |
- 涨价通告英语PDF 360 KB PIN19011 2019年4月10日
- 产品咨询英语PDF 499 KB PA11003 2011年1月05日
- 产品变更通告英语PDF 230 KB PCN10123 2010年12月06日
- 产品变更通告英语PDF 36 KB PCN08050B 2010年10月22日
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
- 应用说明英语PDF 377 KB an9522 1995年3月02日AI 生成的摘要: The report details radiation characterization of the HS-6664RH 64K CMOS PROM across neutron, total dose, dose-rate, and heavy ion single-event environments. Neutron exposure up to 1014/cm2 shows no significant functional degradation or access time increase. Total dose testing up to 1.5M rads(Si) confirms device reliability with minor parametric shifts and no failures. Dose-rate testing reveals transient output upset thresholds at 5x108 rad(Si)/sec and no latch-up up to 5x1011 rad(Si)/sec. Heavy ion testing demonstrates immunity to single event upsets and latch-up up to LET of 116 MEV, validating the hardened design of sense amps and data latches.
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- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
- 应用说明英语PDF 377 KB an9522 1995年3月02日AI 生成的摘要: The report details radiation characterization of the HS-6664RH 64K CMOS PROM across neutron, total dose, dose-rate, and heavy ion single-event environments. Neutron exposure up to 1014/cm2 shows no significant functional degradation or access time increase. Total dose testing up to 1.5M rads(Si) confirms device reliability with minor parametric shifts and no failures. Dose-rate testing reveals transient output upset thresholds at 5x108 rad(Si)/sec and no latch-up up to 5x1011 rad(Si)/sec. Heavy ion testing demonstrates immunity to single event upsets and latch-up up to LET of 116 MEV, validating the hardened design of sense amps and data latches.
应用说明和白皮书 (2)
- 涨价通告英语PDF 360 KB PIN19011 2019年4月10日
- 产品咨询英语PDF 499 KB PA11003 2011年1月05日
- 产品变更通告英语PDF 230 KB PCN10123 2010年12月06日
- 产品变更通告英语PDF 36 KB PCN08050B 2010年10月22日
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