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特性

  • Electrically screened to SMD# 5962-98533
  • QML qualified per MIL-PRF-38535 requirements
  • Radiation environment
    • High dose rate (50-300rad(Si)/s): 100krad(Si)
    • Low dose rate (0.01rad(Si)/s): 50krad(Si)
  • Low noise
    • At 1kHz: 4.3nV√Hz (typical)
    • At 1kHz: 0.6pA√Hz (typical)
  • Low offset voltage: 2.1mV (maximum)
  • High slew rate: 1.7V/μs (minimum)
  • Gain bandwidth product: 8.0MHz (typical)

描述

The HS-OP470ARH and HS-OP470AEH are radiation hardened, monolithic quad operational amplifiers that provide highly reliable performance in harsh radiation environments. Excellent noise characteristics coupled with a unique array of dynamic specifications make these amplifiers well-suited for a variety of satellite system applications. Dielectrically isolated, bipolar processing makes these devices immune to single event latch-up. The HS-OP470ARH and HS-OP470AEH show almost no change in offset voltage after exposure to 100krad(Si) gamma radiation, with only a minor increase in current. Complementing these specifications is a post radiation open-loop gain in excess of 40kV/V. These quad operational amplifiers are available in an industry standard pinout, allowing for immediate interchangeability with most other quad operational amplifiers.

产品参数

属性
RatingSpace
AVOL (dB)92
Bandwidth (MHz)8
Channels (#)4
CMRR (dB)80
IOUT (mA)10
IS per Amp (mA)1.375
Noise VN (nV/√Hz)6
Offset Voltage (max)2.6mV
PSRR (db)80
Rail-to-Rail Input/OutputNo
Slew Rate (V/µs)3
Supply Voltage (min) (V)10 - 10
Supply Voltage (max) (V)30 - 30
Temp. Range (°C)-40 to +125°C, -55 to +125°C
TID HDR (krad(Si))100
TID LDR (krad(Si))50
DSEE (MeV·cm2/mg)86
FlowRH Hermetic
Qualification LevelClass V, EM
Die Sale Availability?Yes
PROTO Availability?Yes

封装选项

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
CFP9.8 x 6.5 x 0.00141.3
DIE

应用

  • High Q, active filters
  • Voltage regulators
  • Integrators
  • Signal generators
  • Voltage references
  • Space environments

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