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描述

The HS-OP470ARH and HS-OP470AEH are radiation hardened, monolithic quad operational amplifiers that provide highly reliable performance in harsh radiation environments. Excellent noise characteristics coupled with a unique array of dynamic specifications make these amplifiers well-suited for a variety of satellite system applications. Dielectrically isolated, bipolar processing makes these devices immune to single event latch-up. The HS-OP470ARH and HS-OP470AEH show almost no change in offset voltage after exposure to 100krad(Si) gamma radiation, with only a minor increase in current. Complementing these specifications is a post radiation open-loop gain in excess of 40kV/V. These quad operational amplifiers are available in an industry standard pinout, allowing for immediate interchangeability with most other quad operational amplifiers.

特性

  • Electrically screened to SMD# 5962-98533
  • QML qualified per MIL-PRF-38535 requirements
  • Radiation environment
    • High dose rate (50-300rad(Si)/s): 100krad(Si)
    • Low dose rate (0.01rad(Si)/s): 50krad(Si)
  • Low noise
    • At 1kHz: 4.3nV√Hz (typical)
    • At 1kHz: 0.6pA√Hz (typical)
  • Low offset voltage: 2.1mV (maximum)
  • High slew rate: 1.7V/μs (minimum)
  • Gain bandwidth product: 8.0MHz (typical)

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类型 文档标题 日期
PCB 设计文件 ZIP 204 KB
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