特性
- Electrically screened to SMD# 5962-98533
- QML qualified per MIL-PRF-38535 requirements
- Radiation environment
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 50krad(Si)
- Low noise
- At 1kHz: 4.3nV√Hz (typical)
- At 1kHz: 0.6pA√Hz (typical)
- Low offset voltage: 2.1mV (maximum)
- High slew rate: 1.7V/μs (minimum)
- Gain bandwidth product: 8.0MHz (typical)
描述
Support is limited to customers who have already adopted these products.
The HS-OP470ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance in harsh radiation environments. Excellent noise characteristics coupled with a unique array of dynamic specifications make these amplifiers well-suited for a variety of satellite system applications. Dielectrically isolated, bipolar processing makes these devices immune to single-event latch-up. The HS-OP470ARH shows almost no change in offset voltage after exposure to 100krad(Si) gamma radiation, with only a minor increase in current. Complementing these specifications is a post-radiation open-loop gain in excess of 40kV/V. This quad operational amplifier is available in an industry-standard pinout, allowing for immediate interchangeability with most other quad operational amplifiers.
应用
- High Q, active filters
- Voltage regulators
- Integrators
- Signal generators
- Voltage references
- Space environments
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | DLA SMD | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | CAGE code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HS0-OP470ARH-Q | Obsolete | N/A | Out of Stock | RoHS:EN RoHS:JA | DIE | 5962-98533 | No | 100 | -55 to +125°C | 34371 | ||||
| HS9-OP470ARH-Q | Obsolete | N/A | Out of Stock | Contact | CFP | 14# | Tray | Not Applicable | 5962-98533 | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS9-OP470ARH/PROTO | Obsolete | N/A | Out of Stock | Contact | CFP | 14# | Tray | Not Applicable | Exempt | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C | 34371 |
- 报告英语PDF 689 KB r34st0006eu0100-hs-op470arh-aeh-see-test-report 2019年12月12日
- 应用说明英语PDF 263 KB r13an0003eu0100-biasing-op-amps 2019年12月06日AI 生成的摘要: Proper biasing of operational amplifiers is essential to avoid malfunction in AC-coupled circuits. A missing DC bias path causes long stabilization times and potential failures. Adding input resistors to ground provides a DC path for bias currents, minimizing offset errors. For single-supply AC-coupled amplifiers, biasing uses a reference voltage, ideally from a high-PSRR voltage reference or buffered voltage divider, to maintain signal symmetry and reduce noise. Understanding frequency responses of input and feedback components is crucial for setting bandwidth and gain characteristics.
- EOL 通告英语PDF 238 KB PLC17051 2017年10月31日
- 产品咨询英语PDF 83 KB PA14004 2014年1月30日
- 产品咨询英语PDF 499 KB PA11003 2011年1月05日
- 产品变更通告英语PDF 230 KB PCN10123 2010年12月06日
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
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- 应用说明英语PDF 263 KB r13an0003eu0100-biasing-op-amps 2019年12月06日AI 生成的摘要: Proper biasing of operational amplifiers is essential to avoid malfunction in AC-coupled circuits. A missing DC bias path causes long stabilization times and potential failures. Adding input resistors to ground provides a DC path for bias currents, minimizing offset errors. For single-supply AC-coupled amplifiers, biasing uses a reference voltage, ideally from a high-PSRR voltage reference or buffered voltage divider, to maintain signal symmetry and reduce noise. Understanding frequency responses of input and feedback components is crucial for setting bandwidth and gain characteristics.
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
应用说明和白皮书 (3)
- EOL 通告英语PDF 238 KB PLC17051 2017年10月31日
- 产品咨询英语PDF 83 KB PA14004 2014年1月30日
- 产品咨询英语PDF 499 KB PA11003 2011年1月05日
- 产品变更通告英语PDF 230 KB PCN10123 2010年12月06日
产品通告(产品变更、EOL 等) (4)
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营销资料 (1)
- 报告英语PDF 689 KB r34st0006eu0100-hs-op470arh-aeh-see-test-report 2019年12月12日
其他 (3)
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Radiation Hardened, Very-Low Noise Quad Operational Amplifier Evaluation Board
The HS-OP470ARHEV1Z evaluation platform is designed to evaluate the HS-OP470ARH radiation hardened, monolithic quad operational amplifier. The evaluation board contains all the circuitry needed to critique the performance of the HS-OP470ARH amplifier. The HS-OP470ARH provides highly reliable... 阅读详情