特性
- Drives Two N-Channel MOSFETs
- Adaptive Shoot-Through Protection
- 0.4Ω On-Resistance and 4A Sink Current Capability
- Supports High Switching Frequency
- Fast Output Rise and Fall
- Ultra Low Three-State Hold-Off Time (20ns)
- ISL6605 Replacement with Enhanced Performance
- BOOT Capacitor Overcharge Prevention (ISL6609A)
- Low VF Internal Bootstrap Diode
- Low Bias Supply Current
- Enable Input and Power-On Reset
- QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
- Pb-Free (RoHS Compliant)
描述
The ISL6609, ISL6609A is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6609, ISL6609A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6609, ISL6609A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. In addition, the ISL6609A's bootstrap function is designed to prevent the BOOT capacitor from overcharging, should excessively large negative swings occur at the transitions of the PHASE node.
应用
- Core Voltage Supplies for Intel® and AMD® Microprocessors
- High Frequency Low Profile High Efficiency DC/DC Converters
- High Current Low Voltage DC/DC Converters
- Synchronous Rectification for Isolated Power Supplies
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL6609CBZ | Obsolete | N/A | Out of Stock | Contact | SOIC | 8# | Tube | 1.3mm | 4.9 x 3.9 x 0.00 | No | 0 to +70°C | ||
| ISL6609CBZ-T | Obsolete | N/A | Out of Stock | Contact | SOIC | 8# | Reel | 1.3mm | 4.9 x 3.9 x 0.00 | No | 0 to +70°C | ||
| ISL6609CRZ | Obsolete | N/A | Out of Stock | Contact | QFN | 8# | Tube | 0.7mm | 3.0 x 3.0 x 0.90 | No | 0 to +70°C | ||
| ISL6609CRZ-T | Obsolete | N/A | Out of Stock | Contact | QFN | 8# | Reel | 0.7mm | 3.0 x 3.0 x 0.90 | No | 0 to +70°C | ||
| ISL6609IBZ | Obsolete | N/A | Out of Stock | Contact | SOIC | 8# | Tube | 1.3mm | 4.9 x 3.9 x 0.00 | No | -40 to +85°C | ||
| ISL6609IBZ-T | Obsolete | N/A | Out of Stock | Contact | SOIC | 8# | Reel | 1.3mm | 4.9 x 3.9 x 0.00 | No | -40 to +85°C | ||
| ISL6609IRZ | Obsolete | N/A | In Stock | RoHS:EN | QFN | 8# | Tube | 3 | 0.7mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL6609IRZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | QFN | 8# | Reel | 3 | 0.7mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
- 产品变更通告英语PDF 326 KB 2021年5月21日
- 产品咨询英语PDF 106 KB PA16061 2016年6月08日
- 产品变更通告英语PDF 151 KB PCN13064 2013年11月21日
- 产品变更通告英语PDF 222 KB PCN13025B 2013年10月25日
- 产品变更通告英语PDF 207 KB PCN13013 2013年3月19日
- 产品变更通告英语PDF 108 KB PCN12068 2012年8月21日
- 产品变更通告英语PDF 248 KB PCN10055 2010年6月30日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
推荐文档 (1)
数据手册 (1)
手册和指南 (1)
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
应用说明和白皮书 (3)
- 产品变更通告英语PDF 326 KB 2021年5月21日
- 产品咨询英语PDF 106 KB PA16061 2016年6月08日
- 产品变更通告英语PDF 151 KB PCN13064 2013年11月21日
- 产品变更通告英语PDF 222 KB PCN13025B 2013年10月25日查看更多 (10)
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ISL6558的电流输出问题
我想用ISL6558跟四个ISL6609芯片配合输出130A电流输出,我想问一下ISL6558芯片是怎样控制电流输出的?
2024年10月28日