特性
- 5V Quad N-Channel MOSFET Drives for Two Synchronous Rectified Bridges
- Pin-to-pin Compatible with ISL6614 (12V Drive)
- Adaptive Shoot-Through Protection
- 0.4Ω On-Resistance and 4A Sink Current Capability
- Supports High Switching Frequency
- Fast Output Rise and Fall
- Low Tri-State Hold-Off Time
- BOOT Capacitor Overcharge Prevention (ISL6610A)
- Low VF Internal Bootstrap Diode
- Power-On Reset
- QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB Utilization, Thinner Profile
- Pb-Free Plus Anneal Available (RoHS Compliant)
描述
Support is limited to customers who have already adopted these products.
The ISL6610, ISL6610A integrates two ISL6609, ISL6609A drivers with enable function removed and is optimized to drive two independent power channels in a synchronous rectified buck converter topology. These drivers, combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller, form a complete high efficiency voltage regulator at high switching frequency. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6610, ISL6610A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6610, ISL6610A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. In addition, the ISL6610As bootstrap function is designed to prevent the BOOT capacitor from overcharging, should excessively large negative swings occur at the transitions of the PHASE node.
应用
- Core Voltage Supplies for Intel® and AMD® Microprocessors
- High Frequency Low Profile High Efficiency DC/DC Converters
- High Current Low Voltage DC/DC Converters
- Synchronous Rectification for Isolated Power Supplies
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Pb (Lead) Free | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|
| ISL6610CBZ | Obsolete | N/A | In Stock | SOICN | 14# | Tube | No | 0 to +70°C |
| ISL6610CBZ-T | Obsolete | N/A | In Stock | SOICN | 14# | Reel | No | 0 to +70°C |
| ISL6610IBZ | Obsolete | N/A | In Stock | SOICN | 14# | Tube | No | -40 to +85°C |
- 产品变更通告英语PDF 294 KB PCN14036 2014年7月08日
- 产品变更通告英语PDF 152 KB PCN12085 2012年11月07日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
- 其他英语PDF 1.17 MB TB389 2024年3月07日
- 其他英语PDF 293 KB tb363 2018年5月04日
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- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
应用说明和白皮书 (3)
- 产品变更通告英语PDF 294 KB PCN14036 2014年7月08日
- 产品变更通告英语PDF 152 KB PCN12085 2012年11月07日
产品通告(产品变更、EOL 等) (3)
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其他 (2)
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