概览
描述
The ISL71441SLH is a radiation hardened PWM input 12V half-bridge GaN FET driver that drives low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver.
The ISL71441SLH can interface directly to the ISL73847SLH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails.
特性
- Qualified to Renesas Rad Hard Plastic Production and QCI Flow (R34ZZ0006EU)
- All screening and QCI is in accordance with SAE AS6294/1
- Up to 20V bootstrap voltage half-bridge driver
- Programmable 4.5V to 5.5V gate drive voltage
- Single tri-level PWM input control
- Separate source and sink driver outputs
- High-side peak drive: 2A Sourcing, 4A Sinking
- Low-side peak drive: 4A Sourcing, 8A Sinking
- High and low-side programmable dead time control
- Highly matched fast propagation delay: 29ns
- Full military temperature operation: TA = -55°C to 125°C ambient range
- 20Ld plastic 5x5mm QFN package
- TID Rad Hard Assurance (RHA) testing
- LDR (0.01rad(Si)/s): 75krad(Si)
- SEE characterization
- No DSEE with VDD = 20V, PHS = 13.5V, PVCC = 6.5V, and AVCC = 6.3V at LET = 86MeV•cm2/mg
- SEFI <10µm2 at LET = 86MeV•cm2/mg
- No half bridge shoot-through SET at LET = 86MeV•cm2/mg
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应用
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 1.43 MB | |
| 其他 | ||
| 报告 | PDF 5.95 MB | |
| 报告 | PDF 567 KB | |
| 技术摘要 | PDF 229 KB | |
| 应用说明 | PDF 224 KB | |
6 项目
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