封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | FBGA |
| Pkg. Code: | VLB |
| Lead Count (#): | 81 |
| Pkg. Dimensions (mm): | 8.0 x 8.0 x 1.36 |
| Pitch (mm): | 0.8 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| Pb (Lead) Free | Yes |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.39.0090 |
产品属性
| Lead Count (#) | 81 |
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | 3 |
| Pb (Lead) Free | Yes |
| Pb Free Category | Pb-Free Ball Terminal (SAC-Q)-e6 |
| MOQ | 25 |
| CAGE code | 34371 |
| DSEE (MeV·cm2/mg) | 86 |
| Die Sale Availability? | No |
| Flow | RH Plastic |
| Gate Drive (V) | 4.5 |
| Input Voltage (Max) (V) | 13.2 |
| Input Voltage (Min) (V) | 4.5 |
| Length (mm) | 8 |
| PROTO Availability? | Yes |
| Pitch (mm) | 0.8 |
| Pkg. Dimensions (mm) | 8.0 x 8.0 x 1.36 |
| Pkg. Type | FBGA |
| Qualification Level | PEMS (RH Plastic) |
| RDSON (Typ) (mΩ) | 7.5 |
| RONN (Ohms) (Ohms) | 0.5 |
| RONP (Ohms) (Ohms) | 2.2 |
| Rating | Space |
| TID LDR (krad(Si)) | 75 |
| Temp. Range (°C) | -40 to +125°C |
| Thickness (mm) | 1.36 |
| UVLO Falling (V) | 3.74 |
| UVLO Rising (V) | 3.98 |
| VDS (V) | 100 |
| VIH (V) | 1.7 |
| VIL (V) | 1.4 |
| Width (mm) | 8 |
有关 ISL73033SLHM 的资源
描述
The ISL73033SLHM is a radiation hardened 100V Gallium Nitride (GaN) FET with an integrated low-side GaN FET driver. The GaN FET are capable of providing up to 45A output and have an RDSON as low as 7.5mΩ. The integrated low-side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, regardless of the supply voltage. The ISL73033SLHM has a propagation delay of 42ns, enabling high switching frequency for better power conversion efficiency. The ISL73033SLHM is characterized over the full military temperature range from -55 °C to +125 °C and receives screening similar to QMLV devices. The device is offered in an 81-lead Ball Grid Array (BGA) plastic package.