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ISL74324M

NEW 有效

Radiation Tolerant 500MHz to 6.5GHz RF Amplifier

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特性

  • Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU)
  • RF range: 500MHz to 6500MHz
  • Noise figure = 2.2dB at 4200MHz
  • Gain = 16.6dB at 4200MHz
  • OIP3 = +38.4dBm at 4200MHz
  • Output P1dB = +21.5dBm at 4200MHz
  • Near-constant gain versus temperature
  • 3.3V or 5V power supply ICC = 40mA to 60mA
  • TID Radiation Lot Acceptance Testing (RLAT) (LDR: ≤ 10mrad(Si)/s):
    • ISL74324M30RZ: 30krad(Si)
    • ISL74324M50RZ: 50krad(Si)
  • SEE Characterization:
    • No DSEE with VCC = 5.5V, ICC = 75mA, and RF input power = 22dBm at 43MeV·cm2/mg
    • SET cross-section ~340μm2 at 48MeV·cm2/mg  passes
  • 3mm x 3mm, 16-QFN package
ISL74324M Block Diagram
ISL74324M Block Diagram

描述

The ISL74324M is a radiation tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) amplifier. The combination of a low noise figure (NF) and high linearity performance allows the device to be used in both receiver and transmitter applications.

The ISL74324M operates with a single 5V or 3.3V power supply using a nominal 60mA. With a supply voltage of 5V, the ISL74324M provides 16.6dB gain with +38.4dBm OIP3 and 2.2dB noise figure at 4200. Additionally, it is bias adjustable and can be operated as low as at 40mA for improved efficiency. This device incorporates a convenient shutdown capability through the STBY pin.

The ISL74324M is packaged in a 3mm x 3mm, 16-pin QFN with 50Ω single-ended RF input and output impedances for ease of integration into the signal path.

产品参数

属性值
Frequency Range (MHz)500 - 6500
Gain (dB)16.6
Noise Figure (dB)2.2
OP1dB (dBm)21.5
Input Supply Range (V)3.15 - 5.25
TID LDR (krad(Si))30, 50
DSEE (MeV·cm2/mg)43
Temp. Range (°C)-55 to +105°C

封装选项

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
QFN3.0 x 3.0 x 0.90160.5

应用

  • L-Band, S-Band Rx/Tx satellite chains
  • Satellite IF Rx/Tx chains
Part NumberStatusSamplesStockPackageTID LDR (krad(Si))Frequency Range (MHz)Gain (dB)Noise Figure (dB)OP1dB (dBm)Input Supply Range (V)DSEE (MeV·cm2/mg)Lead Count (#)
ISL74324M30RZActiveAvailableOut of StockQFN30500 - 650016.6dB2.2dB21.5dBm3.15 - 5.254316#
ISL74324M50RZActiveN/AOut of StockQFN50500 - 650016.6dB2.2dB21.5dBm3.15 - 5.254316#
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筛选

    推荐文档 (1)

  1. 数据手册
    英语
    ISL74324M Datasheet
    RECOMMENDED
    PDF 5.83 MB R34DS0031EU0100 Rev.1.00 2025年12月02日
    The ISL74324M is a radiation-tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) Amplifier. This document describes the main design and operational characteristics of ISL74324M, including pin information, specifications, functional description, and packaging.

    数据手册 (1)

  1. 数据手册
    英语
    ISL74324M Datasheet
    RECOMMENDED
    PDF 5.83 MB R34DS0031EU0100 Rev.1.00 2025年12月02日
    The ISL74324M is a radiation-tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) Amplifier. This document describes the main design and operational characteristics of ISL74324M, including pin information, specifications, functional description, and packaging.

    应用说明和白皮书 (1)

  1. 应用说明
    英语
    AN9654: Use of Life Tested Parts
    PDF 224 KB an9654 1999年5月05日
    AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.

    其他 (2)

  1. 技术摘要
    英语
    R34TB0004EU: Renesas Radiation Tolerant Plastic Screening and QCI Flow
    PDF 344 KB R34TB0004EU0104 Rev.1.04 2026年3月13日
  2. 报告
    英语
    ISL74324M Neutron Test Report
    PDF 434 KB R34TR0071EU0100 Rev.1.00 2025年11月07日
    The ISL74324M is a 500MHz to 6500MHz SiGe BiCMOS High-Gain Broadband RF Amplifier. This report documents the results of 1MeV equivalent neutron testing of the ISL74324M.

Renesas Boards & Kits

ISL74324MEVAL1Z Evaluation Board
ISL74324MEVAL1Z 有效

Radiation Tolerant 500MHz to 6.5GHz RF Amplifier Evaluation Board

The ISL74324MEVAL1Z evaluation board provides a quick way to evaluate the ISL74324 radiation tolerant RF amplifier. The board provides access to the STBY pins and to the RSET pins. Therefore, the standby functionality can be evaluated. With access to the RSET pin, the user can change the bias... 阅读详情

推荐文档：
ISL74324MEVAL1Z Evaluation Board Manual
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筛选

模拟模型

    模拟模型 (1)

  1. 模型 - 散射参数
    英语
    ISL74324M S-parameters
    ZIP 492 KB 2024年5月22日
    The ISL74324M is a radiation tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) amplifier that can be used in both receiver and transmitter applications. This S-parameter model allows the user to evaluate the small-signal RF performance of this device, including gain, isolation, and return losses at varying bias points.
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