特性
- High slew rate: 120V/μs
- Fast settling: 200ns
- Full power bandwidth: 2MHz
- Gain bandwidth (AV ≥ 3): 20MHz
- High input impedance: 100MΩ
- Low offset current: 10nA
- Compensation pin for unity gain capability
- Pb-free PDIP available (RoHS compliant)
描述
The JM38510/12206BGA is the JAN version of the HA2-2520. HA-2520, HA-2522, and HA-2525 comprise a series of operational amplifiers delivering an unsurpassed combination of specifications for slew rate, bandwidth, and settling time. These dielectrically isolated amplifiers are controlled at closed-loop gains greater than three without external compensation. In addition, these high-performance components also provide low offset current and high input impedance. 120V/μs slew rate and 200ns (0.2%) settling time of these amplifiers make them ideal components for pulse amplification and data acquisition designs. These devices are valuable components for RF and video circuitry requiring up to 20MHz gain bandwidth and 2MHz power bandwidth. For accurate signal conditioning designs the HA-2520, HA-2522, and HA-2525’s superior dynamic specifications are complemented by 10nA offset current, 100MΩ input impedance and offset trim capability.
产品参数
| 属性 | 值 |
|---|---|
| Rating | Harsh Environment |
| AVOL (dB) | 7.5 |
| Bandwidth (MHz) | 20 |
| Channels (#) | 1 |
| CMRR (dB) | 80 |
| IOUT (mA) | 10 |
| IS per Amp (mA) | 4 |
| Noise VN (nV/√Hz) | 20 |
| Offset Voltage (max) | 11mV |
| PSRR (db) | 80 |
| Rail-to-Rail Input/Output | No |
| Slew Rate (V/µs) | 120 |
| Supply Voltage (min) (V) | 16 - 16 |
| Supply Voltage (max) (V) | 36 - 36 |
| Temp. Range (°C) | -55 to +125°C |
| Flow | Harsh Environment & MIL-STD-883 |
| Qualification Level | Class Q |
| Die Sale Availability? | No |
| PROTO Availability? | No |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) | Pitch (mm) |
|---|---|---|---|
| CAN | 9.1 x 9.1 x 0.00 | 8 | 5.1 |
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | CAGE code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JM38510/12206BGA | Active | Available | In Stock | CAN | 8# | Tray | Not Applicable | No | Hot Solder Dip | 60 | -55 to +125°C | 34371 |
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- 应用说明英语PDF 564 KB an1993 2018年5月22日AI 生成的摘要: Voltage feedback (VFB) amplifiers use a differential input pair, a high-impedance stage, and an output buffer to convert input voltage differences into output voltage. The VFB amplifier's gain decreases at a dominant pole frequency due to compensation capacitors. Current feedback (CFB) amplifiers include a class AB input amplifier, current mirror, high-impedance stage, and output buffer. CFB amplifiers provide faster switching and higher slew rates by drawing charge/discharge currents directly from supply rails, unlike VFB amplifiers which are limited by biasing current sources.
- 产品咨询英语PDF 499 KB PA11003 2011年1月05日
- 产品咨询英语PDF 67 KB PA10098 2010年10月21日
- 应用说明英语PDF 357 KB an1694 2004年1月19日AI 生成的摘要: The document outlines the four fundamental internal blocks of an operational amplifier and presents a simple 2:1 stage circuit diagram. It includes important legal notices from Renesas Electronics regarding the use, liability, and intellectual property rights of their semiconductor products. The document clarifies product quality grades, intended applications, and restrictions on use in life-critical or hazardous systems. It emphasizes compliance with applicable laws and safety responsibilities when using Renesas products. Contact information for Renesas sales offices worldwide is also provided.
- 应用说明英语PDF 843 KB an535 2002年6月05日AI 生成的摘要: A Data Acquisition System (DAS) requires careful design of signal conditioning, transducer selection, and signal transmission to ensure high accuracy. Signal conditioning includes multiplexing, amplification, filtering, and calibration, ideally performed near the transducer. Transducers convert physical variables to electrical signals, often voltage, with low source resistance preferred. Signal paths can be single-ended or differential; differential paths better reject common mode noise, especially for low-level signals. Shielded twisted pairs and balanced lines reduce interference. Filters, typically Butterworth low-pass, prevent aliasing and maintain signal integrity.
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
- 其他英语Standard Microcircuit Drawing MIL-M-38510/122C (HA-2500/883, HA-2510/883, HA-2520, HA-2600, HA-2620)RECOMMENDED2018年8月28日
- 其他英语Standard Microcircuit Drawing MIL-M-38510/122C (HA-2500/883, HA-2510/883, HA-2520, HA-2600, HA-2620)RECOMMENDED2018年8月28日
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- 应用说明英语PDF 564 KB an1993 2018年5月22日AI 生成的摘要: Voltage feedback (VFB) amplifiers use a differential input pair, a high-impedance stage, and an output buffer to convert input voltage differences into output voltage. The VFB amplifier's gain decreases at a dominant pole frequency due to compensation capacitors. Current feedback (CFB) amplifiers include a class AB input amplifier, current mirror, high-impedance stage, and output buffer. CFB amplifiers provide faster switching and higher slew rates by drawing charge/discharge currents directly from supply rails, unlike VFB amplifiers which are limited by biasing current sources.
- 应用说明英语PDF 357 KB an1694 2004年1月19日AI 生成的摘要: The document outlines the four fundamental internal blocks of an operational amplifier and presents a simple 2:1 stage circuit diagram. It includes important legal notices from Renesas Electronics regarding the use, liability, and intellectual property rights of their semiconductor products. The document clarifies product quality grades, intended applications, and restrictions on use in life-critical or hazardous systems. It emphasizes compliance with applicable laws and safety responsibilities when using Renesas products. Contact information for Renesas sales offices worldwide is also provided.
- 应用说明英语PDF 843 KB an535 2002年6月05日AI 生成的摘要: A Data Acquisition System (DAS) requires careful design of signal conditioning, transducer selection, and signal transmission to ensure high accuracy. Signal conditioning includes multiplexing, amplification, filtering, and calibration, ideally performed near the transducer. Transducers convert physical variables to electrical signals, often voltage, with low source resistance preferred. Signal paths can be single-ended or differential; differential paths better reject common mode noise, especially for low-level signals. Shielded twisted pairs and balanced lines reduce interference. Filters, typically Butterworth low-pass, prevent aliasing and maintain signal integrity.
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
应用说明和白皮书 (5)
- 产品咨询英语PDF 499 KB PA11003 2011年1月05日
- 产品咨询英语PDF 67 KB PA10098 2010年10月21日
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- 其他英语Standard Microcircuit Drawing MIL-M-38510/122C (HA-2500/883, HA-2510/883, HA-2520, HA-2600, HA-2620)RECOMMENDED2018年8月28日
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