特性
- 2.5 V drive available
- Super low on-state resistance
RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
RDS(on)2 = 73 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A) - Built-in gate protection diode
描述
The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2. 5 V drive switching applications.
产品参数
属性 | 值 |
---|---|
Qualification Level | Industrial |
Nch/Pch | Pch |
Channels (#) | 1 |
Standard Pkg. Type | TO-252 / DPAK |
VDSS (Max) (V) | -40 |
ID (A) | -15 |
RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) | 40 |
RDS (ON) (Max) @2.5V or 1.8V (mohm) | 73 |
Pch (W) | 25 |
Vgs (off) (Max) (V) | -1.5 |
VGSS (V) | -12 |
Ciss (Typical) (pF) | 1400 |
Qg typ (nC) | 16 |
Mounting Type | Surface Mount |
封装选项
Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
---|---|---|
MP-3ZK | 6 x 6 x 2.65 | 3 |
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