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特性

  • Super low on-state resistance
    RDS(on) = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )
  • Low Ciss : Ciss = 3900 pF TYP. ( VDS = 25 V )

描述

This product is N-channel MOS Field Effect Transistors designed for high current switching applications.

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