特性
- Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 30 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
- Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual
描述
NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 2 |
| Standard Pkg. Type | Power SON-8 5x6 |
| VDSS (Max) (V) | 60 |
| ID (A) | 30 |
| RDS (ON) (Max) @10V or 8V (mohm) | 20 |
| RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) | 30 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 13.8 |
| Pch (W) | 44 |
| Vgs (off) (Max) (V) | 2.5 |
| VGSS (V) | 20 |
| Ciss (Typical) (pF) | 1000 |
| Mounting Type | Surface Mount |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| HSON | 5 x 5 x 1.45 | 8 |
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