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特性

  • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
  • Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON dual

描述

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

产品参数

属性
Qualification Level Automotive
Nch/Pch Nch
Channels (#) 2
Standard Pkg. Type Power SON-8 5x6
VDSS (Max) (V) 60
ID (A) 30
RDS (ON) (Max) @10V or 8V (mohm) 14
RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) 21
RDS (ON) (Typical) @ 10V / 8V (mohm) 11.5
Pch (W) 59
Vgs (off) (Max) (V) 2.5
VGSS (V) 20
Ciss (Typical) (pF) 1500
Mounting Type Surface Mount

封装选项

Pkg. Type Pkg. Dimensions (mm) Lead Count (#)
HSON 5 x 5 x 1.45 8

应用方框图

Highly Integrated 100W USB-PD Charger Block Diagram
100W USB PD 车载集成式充电器
使用 100W USB PD 3.0 车载充电器在旅途中为设备高效充电,方便旅行。

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