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NP30N06QDK

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Nch Dual Power MOSFET 60V 30A 14mohm Power SON-8 5x6 for Automotive

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特性

  • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
  • Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON dual
查找功率 MOSFET的其他产品

描述

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

产品参数

属性值
Qualification LevelAutomotive
Nch/PchNch
Channels (#)2
Standard Pkg. TypeSO8-FL 5x6 BSC
Gate LevelLogic
VDSS (Max) (V)60
ID (A)30
RDS (ON) (Max) @10V (mohm)14
RDS (ON) (Max) @4.5V (mohm)21
Pch (W)59
Ciss (Typical) (pF)1500
Series NameNP Series

封装选项

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
HSON5 x 5 x 1.458

应用方框图

Highly Integrated 100W USB-PD Charger Block Diagram
100W USB PD 车载集成式充电器
使用 100W USB PD 3.0 车载充电器在旅途中为设备高效充电，方便旅行。

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电池管理 IC
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Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP30N06QDK-E1-AYActiveAvailableIn StockRoHS:EN
RoHS:JA
HSON1ku | $0.8828#Embossed Tape1YesJAPANJAPAN

完成您的设计

寻找相关的产品，完善您的设计

RL78 低功耗 8 位和 16 位 MCU
RL78/F14
适用于汽车应用的低功耗微控制器
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电池管理 IC
RAA489000
降压-升压可配置电池充电器，具有 USB 供电和 USB Type-C 端口控制器接口（TCPCI）
 数据手册
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筛选

    推荐文档 (1)

  1. 数据手册
    英语
    NP30N06QDK60 V - 30 A - Dual N-channel Power MOS FETApplication: Automotive
    RECOMMENDED
    PDF 476 KB R07DS1332EJ0200 Rev.2.00 2018年5月24日

    数据手册 (1)

  1. 数据手册
    英语
    NP30N06QDK60 V - 30 A - Dual N-channel Power MOS FETApplication: Automotive
    RECOMMENDED
    PDF 476 KB R07DS1332EJ0200 Rev.2.00 2018年5月24日

    手册和指南 (1)

  1. 指南
    英语
    Recommended Mounting Pad for Renesas Power MOSFETs
    PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日
    The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.

    应用说明和白皮书 (4)

  1. 应用说明
    英语
    Power MOSFETs TOLL and TOLT Comparison of Thermal Performance
    PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日
    Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
  2. 应用说明
    英语
    Power MOSFETs: How Does the Frequency Affect Capacitance Measurement?
    PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日
    Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
  3. 应用说明
    英语
    Power MOSFET Application Note
    PDF 3.23 MB R07AN0007EJ0110 Rev.1.10 日本語 2022年12月05日
    AI 生成的摘要: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
  4. 应用说明
    英语
    Attention of Handling Semiconductor Devices
    PDF 648 KB R07ZZ0010EJ0602 Rev.6.02 日本語 2021年4月16日
    AI 生成的摘要: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.

    质量和可靠性 (1)

  1. 产品可靠性报告
    英语
    NP-Series ANL2Nch-HSON8D Reliability Report for AEC-Q101
    PDF 222 KB APR-22-H0291 2022年6月28日

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The VC4 is based on a complete Renesas chipset. The centerpiece is the R-Car S4 with 8x Cortex®A55 cores, 1x Cortex® R52 core 2x RH850 G4MH delivering up to 27K DMIPS application performance and up to 5.3K DMIPS lock step real-time performance. It incorporates an 8MB SRAM to execute code on the... 阅读详情

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