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瑞萨电子 (Renesas Electronics Corporation)

特性

  • Channel temperature 175 degree rated
  • Low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A)
  • Low input capacitance Ciss = 3500 pF TYP. (VDS = 25 V)

描述

Support is limited to customers who have already adopted these products.

The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

产品参数

属性
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-252 / DPAK
Gate LevelStandard
VDSS (Max) (V)30
ID (A)55
RDS (ON) (Max) @10V (mohm)5
Pch (W)77
Ciss (Typical) (pF)3500
Qg typ (nC)62
Series NameNP Series

封装选项

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-3ZK6 x 6 x 2.653

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