概览
简介
TP65H050G4YS 650V 50mΩ 氮化镓 （GaN） FET 是使用瑞萨电子第四代平台构建的常闭器件。 它结合了最先进的高压 GaN HEMT 和低压硅 MOSFET 技术，提供卓越的可靠性和性能。
瑞萨电子 GaN 通过更低的栅极电荷、更低的交越损耗和更小的反向恢复电荷，提供比硅更高的效率。
TP65H050G4YS采用行业标准的 TO-247-4 封装，具有 Kelvin 源极和通用源极封装配置。
特性
- 第四代技术
- 符合 JEDEC 标准的 GaN 技术
- 动态 RDS（on）eff 生产测试
- 坚固的设计，定义
- 宽栅极安全裕度
- 瞬态过压能力
- 非常低的 QRR
- 减少分频损耗
- 符合 RoHS 标准和无卤素包装
- 在硬开关和软开关电路中实现更高的效率
- 提高功率密度
- 减小系统尺寸和重量
- 总体降低系统成本
- 使用常用的栅极驱动器轻松驱动
- 用于提高性能的 Kelvin 源
- 采用 Si 和 SiC TO-247-4 的引脚对引脚插入式封装（注意：公端是源极与漏极）
产品对比
应用
应用
- 数据通信
- 博大实业
- 光伏逆变器
- 伺服电机
设计和开发
模型
ECAD 模块
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| TO-247-4L | Tube | 3 | Through Hole | -55 to +150°C |
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