1.2 kW Half-bridge Synchronous Buck or Boost Evaluation Platform
The TDHBG1200DC100 1.2 kW half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and...
TP65H070G4LSG 650V 72mΩ 氮化镓 (GaN) FET 是使用我们的 Gen IV 平台构建的常闭器件。 它结合了最先进的高压 GaN HEMT 和低压硅 MOSFET 技术,提供卓越的可靠性和性能。
瑞萨电子的 GaN 功率产品通过更低的栅极电荷、更低的交越损耗和更小的反向恢复电荷,提供比硅更高的效率。
TP65H070G4LSG 采用性能 PQFN88 和通用源封装配置。
The TDHBG1200DC100 1.2 kW half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and...
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Pkg. Type |
Carrier Type |
Moisture Sensitivity Level (MSL) |
Mounting Type |
Temp. Range |
购买 / 样片 |
|
---|---|---|---|---|---|---|
器件号 | ||||||
PQFN88 | Tape & Reel | 3 | Surface Mount | -55 to +150°C |