概览

TP65H70G4PS 650V 72mΩ 氮化镓 （GaN） FET 是使用我们的 Gen IV 平台构建的常闭器件。 它结合了最先进的高压 GaN HEMT 和低压硅 MOSFET 技术，提供卓越的可靠性和性能。

瑞萨电子的 GaN 功率产品通过更低的栅极电荷、更低的交越损耗和更小的反向恢复电荷，提供比硅更高的效率。

TP65H070G4PS 采用行业标准 TO-220 封装，具有通用源封装配置。

TP65H070G4PS Typical Diagram
TP65H070G4PS Efficiency
TP65H070G4PS Power Loss
TP65H070G4PS Typical Diagram
TP65H070G4PS Efficiency
TP65H070G4PS Power Loss
  • 符合 JEDEC 标准的 GaN 技术
  • Dynamic RDS（on）eff 经过生产测试
  • 坚固的设计，定义
    • 固有寿命测试
    • 宽栅极安全裕度
    • 瞬态过压能力
  • 非常低的 QRR
  • 减少分频损耗
  • 支持 AC-DC 和 DC-DC 设计
    • 提高功率密度
    • 减小系统尺寸和重量
    • 总体降低系统成本
  • 在硬开关和软开关电路中实现更高的效率
  • 使用常用栅极驱动器易于驱动
  • 符合 RoHS 标准和无卤素包装

应用

  • 数据通信
  • 博大实业
  • 光伏逆变器
  • 伺服电机
  • 计算
  • 消费领域

文档

= 相关文档
类型 文档标题 日期
数据手册
TP65H070G4PS Datasheet
PDF 918 KB
1 item

设计和开发

ECAD 模块

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

扩展 ECAD 模块
Diagram of ECAD Models

产品选择

    Processing table
    Pkg. Type
    Carrier Type
    Moisture Sensitivity Level (MSL)
    Mounting Type
    Temp. Range
    购买 / 样片
    器件号
    TP65H070G4PS
    circle有效
    memory
    view_in_ar
    		TO-220 Tube 1 Through Hole -55 to +150°C
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