特性
- 150mOhm, 700V GaN Device in PQFN 8x8 performance package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by:
- 800V transient over-voltage capability
- Operation with E-mode Gate drivers without the need for Zener protection
- Low QRR
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
描述
The TP70H150G4LSG 700V 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN performance package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, delivering exceptional performance, standard drive compatibility, ease of adoption, and enhanced reliability.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 700 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 150 |
| RDSON (max) (mΩ) | 180 |
| Vth typ (V) | 4 |
| Id max @ 25°C (A) | 14.2 |
| Qrr typ (nC) | 0 |
| Qg typ (nC) | 11.3 |
| Qoss (nC) | 27.3 |
| Ron * Qoss (FOM) | 4095 |
| Ciss (Typical) (pF) | 567 |
| Coss (Typical) (pF) | 26 |
| trr (Typical) (nS) | 29 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) |
|---|---|
| PQFN88 | 8 x 8 |
应用方框图
|
100W/140W USB-C 和 USB PD 电源
具有多路输出、更高效率和高性价比设计的 USB-C 和 USB PD 电源。
|
|
高效ZVS 140W USB-C电源
140W USB-C 电源，支持 SuperGaN、自适应 ZVS、智能 PFC，以及 28V/5A 的高效。
|
|
65W USB-C 适配器，零待机功耗，支持单/双输出
紧凑型 65W USB-C 适配器，采用 USB PD 3.1 和 ZSP 设计，单/双端口充电，效率高。
|
|
240W USB PD AC/DC 适配器
高效 240W AC/DC 适配器，配备 USB PD 3.2 EPR 输出接口。
|
其他应用
- Consumer
- Power adapters
- Low power SMPS
- Lighting
- POE Power