概览

NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
  • Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON dual

文档

= 相关文档
类型 文档标题 日期
数据手册
NP16N06QLK60 V - 16 A - Dual N-channel Power MOS FETApplication: Automotive
PDF 541 KB
指南
Power Discretes Part Number Guide
PDF 2.65 MB
应用文档
Power MOSFET Application Note
PDF 3.23 MB 日文
Product Reliability Report
NP-Series ANL2Nch-HSON8D Reliability Report for AEC-Q101
PDF 222 KB
应用文档
Attention of Handling Semiconductor Devices
PDF 648 KB 日文
手册
Power MOSFET & IPD
PDF 2.24 MB
6 items

设计和开发

ECAD 模块

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

扩展 ECAD 模块
Diagram of ECAD Models

产品选择

    Processing table
    Pkg. Type
    Standard Pkg. Type
    Carrier Type
    Moisture Sensitivity Level (MSL)
    Price (USD) | 1ku
    购买 / 样片
    器件号
    NP16N06QLK-E1-AY
    circle有效
    memory
    view_in_ar
    可提供样片
    立即购买
    		HSON Power SON-8 5x6 Embossed Tape 1 获取样片,
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