瑞萨电子 (Renesas Electronics Corporation)
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NP16N06QLK

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Nch Dual Power MOSFET 60V 16A 39mohm Power SON-8 5x6 for Automotive

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NP16N06QLK60 V - 16 A - Dual N-channel Power MOS FETApplication: Automotive

概览

NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
  • Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON dual

文档

相关文档
类型 文档标题 日期
数据手册
NP16N06QLK60 V - 16 A - Dual N-channel Power MOS FETApplication: Automotive
PDF 541 KB
指南
Power Discrete Mount Pad
PDF 796 KB
应用说明
Power MOSFET Application Note
PDF 3.23 MB 日本語
产品可靠性报告
NP-Series ANL2Nch-HSON8D Reliability Report for AEC-Q101
PDF 222 KB
应用说明
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
宣传手册
Power MOSFET & IPD
PDF 2.24 MB
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