概览
描述
The R1LV0208BSA is a low-voltage, 2-Mbit static RAM organized as 262, 144-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV0208BSA realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. The R1LV0208BSA is packaged in a 32-pin sTSOP.
特性
- Single 2.7V ~ 3.6V power supply
- Small stand-by current: 1µA (3.0V, typical)
- No clocks, No refresh
- All inputs and outputs are TTL compatible.
- Easy memory expansion by CS1# and CS2
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE# prevents data contention on the I/O bus
产品对比
应用
文档
相关文档
请登录后开启订阅
|
|
|
|
|---|---|---|
| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 292 KB 日本語 | |
| 指南 | PDF 207 KB 日本語 | |
| 指南 | PDF 1.27 MB 日本語 | |
| 产品可靠性报告 | PDF 202 KB | |
| 产品变更通告 | PDF 1.22 MB 日本語 | |
| 封装外形图 | PDF 77 KB | |
| 产品变更通告 | PDF 818 KB 日本語 | |
| 产品变更通告 | PDF 1.26 MB 日本語 | |
| 宣传手册 | PDF 3.28 MB | |
|
9 项目
|
||
设计和开发
产品选项
当前筛选条件
