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瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community
2Mb Advanced LPSRAM (256k word x 8bit)

封装信息

CAD 模型:View CAD Model
Pkg. Type:sTSOP(32)
Pkg. Code:pkg_11617
Lead Count (#):32
Pkg. Dimensions (mm):12 x 8 x 1.2
Pitch (mm):0.5

环境和出口类别

Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
Pb (Lead) FreeYes

产品属性

Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)3
Country of AssemblyMALAYSIA, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)55
Density (Kb)2000
Lead CompliantYes
Lead Count (#)32
Length (mm)12
MOQ1000
Memory Capacity (kbit)2000
Memory Density2
Organization256K x 8
Organization (bit)x 8
Organization (kword)256
Pb (Lead) FreeYes
Pkg. Dimensions (mm)12 x 8 x 1.2
Pkg. TypesTSOP(32)
Price (USD)$2.64743
RemarksDual Chip Select (CS1#, CS2)
Replacement Remarkconsolidation of part-names and/or assembly material change
Supply Voltage (V)2.7 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)8

描述

The R1LV0208BSA is a low-voltage, 2-Mbit static RAM organized as 262, 144-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV0208BSA realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. The R1LV0208BSA is packaged in a 32-pin sTSOP.