封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TSOP(2) |
| Pkg. Code: | pkg_11787 |
| Lead Count (#): | 44 |
| Pkg. Dimensions (mm): | 18.41 x 10.16 x 1.2 |
| Pitch (mm): | 0.8 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | 3A991.b.2.a |
| HTS (US) | 8542.32.0041 |
| RoHS (R1LV0216BSB-5SI#B1) | 英语日文 |
| Pb (Lead) Free | Yes |
产品属性
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | TAIWAN |
| Country of Wafer Fabrication | JAPAN |
| Access Time (ns) | 55 |
| Density (Kb) | 2000 |
| Lead Compliant | Yes |
| Lead Count (#) | 44 |
| Length (mm) | 18 |
| Longevity | 2032 12月 |
| MOQ | 1 |
| Memory Capacity (kbit) | 2000 |
| Memory Density | 2M |
| Organization | 128K x 16 |
| Organization (bit) | x 16 |
| Organization (kword) | 128 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 18 x 10 x 1.2 |
| Pkg. Type | TSOP(44) |
| Price (USD) | $2.49072 |
| Remarks | Single Chip Select (CS#） |
| Replacement Remark | consolidation of part-names and/or Back-end site change |
| Supply Voltage (V) | 2.7 - 3.6 |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to +85 |
| Thickness (mm) | 1.2 |
| Width (mm) | 10 |
有关 R1LV0216BSB 的资源
描述
The R1LV0216BSB is a low-voltage 2-Mbit static RAM organized as 131, 072-word by 16-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV0216BSB realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. The R1LV0216BSB is packaged in a 44-pin TSOP.