封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TFBGA |
| Pkg. Code: | pkg_846 |
| Lead Count (#): | 48 |
| Pkg. Dimensions (mm): | 9.5 x 8 x 1.2 |
| Pitch (mm): | 0.75 |
环境和出口类别
| ECCN (US) | 3A991.b.2.a |
| HTS (US) | 8542.32.0041 |
| RoHS (R1LV1616HBG-4SI#B0) | 英语日文 |
| Moisture Sensitivity Level (MSL) | 3 |
| Pb (Lead) Free | Yes |
产品属性
| Carrier Type | Tray |
| Access Time (ns) | 45 |
| Density (Kb) | 16000 |
| Lead Compliant | Yes |
| Lead Count (#) | 48 |
| Length (mm) | 10 |
| MOQ | 1 |
| Memory Capacity (kbit) | 16000 |
| Memory Density | 16M |
| Moisture Sensitivity Level (MSL) | 3 |
| Organization | 1M x 16 |
| Organization (bit) | x 16 |
| Organization (kword) | 1000 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 10 x 8 x 1.2 |
| Pkg. Type | TFFBGA |
| Remarks | Dual Chip Select (CS1#, CS2) |
| Replacement Product | RMLV1616AGBG-4U2#AC0 |
| Supply Voltage (V) | 2.7 - 3.6 |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to +85 |
| Thickness (mm) | 1.2 |
| Width (mm) | 8 |
有关 R1LV1616HBG 的资源
描述
The R1LV1616HBG-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit with embedded ECC. R1LV1616HBG-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-ball plastic FBGA for high density surface mounting.