封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | SOP |
| Pkg. Code: | pkg_441 |
| Lead Count (#): | 28 |
| Pkg. Dimensions (mm): | 18 x 8 x 2.4 |
| Pitch (mm): | 1.27 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| RoHS (R1LV5256ESP-5SI#B1) | 英语日文 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | CHINA, TAIWAN |
| Country of Wafer Fabrication | JAPAN |
| Access Time (ns) | 55 |
| Density (Kb) | 256 |
| Lead Compliant | Yes |
| Lead Count (#) | 28 |
| Length (mm) | 18 |
| Longevity | 2032 12月 |
| MOQ | 1 |
| Memory Capacity (kbit) | 256 |
| Memory Density | 0.256 |
| Organization | 32K x 8 |
| Organization (bit) | x 8 |
| Organization (kword) | 32 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 18 x 8 x 2.4 |
| Pkg. Type | SOP |
| Price (USD) | $1.83257 |
| Remarks | Single Chip Select (CS#） |
| Replacement Remark | Assembly site transfer to serve the objective of stable supply |
| Supply Voltage (V) | 2.7 - 3.6 |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to +85 |
| Thickness (mm) | 2.4 |
| Width (mm) | 8 |
有关 R1LV5256E 的资源
描述
The R1LV5256E is a low-voltage 256-Kbit static RAM organized as 32, 768-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV5256E realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. It has been packaged in 28-pin SOP and 28-pin TSOP.