跳转到主要内容
瑞萨电子 (Renesas Electronics Corporation)
4M High-Speed SRAM (512-kword × 8-bit)

封装信息

CAD 模型:View CAD Model
Pkg. Type:SOJ
Pkg. Code:pkg_474
Lead Count (#):36
Pkg. Dimensions (mm):23 x 10 x 3.55
Pitch (mm):1.27

环境和出口类别

Moisture Sensitivity Level (MSL)3
RoHS (R1RP0408DGE-2PR#B1)英语日文
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

产品属性

Carrier TypeTube
Moisture Sensitivity Level (MSL)3
Country of AssemblyTAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)12
Bus Width (bits)8
Core Voltage (V)5V
Density (Kb)4096
I/O Voltage (V)5
Lead CompliantYes
Lead Count (#)36
Length (mm)23
MOQ1
Memory Capacity (kbit)4000
Organization512K x 8
Organization (bit)x 8
Pb (Lead) FreeYes
Pkg. Dimensions (mm)23 x 10 x 3.55
Pkg. TypeSOJ
Price (USD)$6.38227
RemarksContact us for Successor Products information.
Supply Voltage (V)4.5 - 5.5
Tape & ReelNo
Thickness (mm)3.55
Width (mm)10

描述

The R1RP0408D Series is a 4Mbit high-speed static RAM organized 512-k word × 8-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. It is packaged in a 400-mil 36-pin plastic SOJ.